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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21030/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power -- 3.5 Watts Power Gain -- 14 dB Efficiency -- 15% * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21030LR3 MRF21030LSR3
2.2 GHz, 30 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1 NI - 400 MRF21030LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF21030LSR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Test Conditions Human Body Model Machine Model Value 65 - 0.5, +15 83.3 0.48 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Class 2 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.1 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Rev. 10
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF21030LR3 MRF21030LSR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output.
Ciss Coss Crss
-- -- --
98.5 37 1.3
-- -- --
pF pF pF
Gps
--
13
--
dB
--
33
--
%
IMD
--
- 30
--
dBc
IRL
--
- 13
--
dB
Gps
12
13
--
dB
31
33
--
%
IMD
--
- 30
- 27.5
dBc
IRL
--
- 13
-9
dB
No Degradation In Output Power Before and After Test
MRF21030LR3 MRF21030LSR3 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG + C6 C5 B1 B2 VDD + C12 C13
R1
+ C4 C8 C10 C11
R2
L1 RF INPUT
L2 RF OUTPUT
Z1
Z2
Z3 C2 C1
Z4
Z5
Z6 DUT
Z7
Z8
Z9 C9
Z10
C3
C7
Freescale Semiconductor, Inc...
B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2
Short Ferrite Beads 1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.5 pF Chip Capacitor 3.9 pF Chip Capacitor 0.1 F Chip Capacitors 470 F, 63 V Electrolytic Chip Capacitors 0.3 pF Chip Capacitors 3.6 pF Chip Capacitor 22 F Tantalum Chip Capacitor 5.1 pF Chip Capacitor 12.5 nH Inductors 12 Chip Resistors (1206)
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 PCB
0.153 x 0.087 Microstrip 0.509 x 0.156 Microstrip 0.572 x 0.087 Microstrip 0.509 x 0.232 Microstrip 0.277 x 0.143 Microstrip 0.200 x 0.305 Microstrip 0.200 x 0.511 Microstrip 0.510 x 0.328 Microstrip 0.608 x 0.081 Microstrip Taconic TLX8, 30 mils, r = 2.55
Figure 1. MRF21030LR3(LSR3) Test Circuit Schematic
C13
+
V BIAS C6
C5 R1 B1 C4 WB1 WB2 C2 L1 C10 C8 L2 C7 CUT OUT AREA R2 B2 C12 C11
+
VSUPPLY
C9
C1
C3
Ground
Ground MRF21030 Rev 1
Figure 2. MRF21030LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21030LR3 MRF21030LSR3 3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 60 50 IRL 40 30 20 10 IMD 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 -35 2200 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA Two-Tone Measurement, 100 kHz Tone Spacing Gps -15 -20 -25 -30 -5 -10 , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 30 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) -20 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc)
25
-30
20 ACPR
-40
15 Gps
-50
10
-60
5 0 1 2 3 4 5 Pout, OUTPUT POWER (WATTS Avg.) CDMA 6
-70
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, -30 100 kHz Tone Spacing -35 -40 -45 -50 -55 1.0 200 mA 250 mA 400 mA 300 mA 350 mA 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order
-40 7th Order 5th Order
-50
-60
-70 1.0
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
Figure 6. Intermodulation Distortion Products versus Output Power
16
15
-22 -24
G ps , POWER GAIN (dB)
15
G ps , POWER GAIN (dB)
400 mA 350 mA 300 mA 250 mA 200 mA VDD = 28 Vdc, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 13 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100
14.5 Gps 14 IMD
-26 -28 -30 -32
14
13.5
Pout = 30 W (PEP) IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 22 24 26 28 30 32
-34 -36 -38 34
13 20
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage
MRF21030LR3 MRF21030LSR3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Zo = 25 f = 2170 MHz Zload
f = 2110 MHz f = 2170 MHz Zsource
f = 2110 MHz
Freescale Semiconductor, Inc...
VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 2110 2140 2170 Zsource 15.3 - j9.4 14.6 - j9.4 14.3 - j8.8 Zload 3.7 - j0.78 3.4 - j0.37 3.0 + j0.13
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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MRF21030LR3 MRF21030LSR3 5
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF21030LR3 MRF21030LSR3 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc
M M
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TB
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M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
B
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B
M
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M
TA
M
B
M
Freescale Semiconductor, Inc...
R (LID) F
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M
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M
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M (INSULATOR) A
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SEATING PLANE
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DIM A B C D E F G H K M N Q R S aaa bbb ccc
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CASE 465E - 04 ISSUE E NI - 400 MRF21030LR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K ccc E TA B R C
3 (LID)
M
M
M
N
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M
TA
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B
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H
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M
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B
B
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TA
M
B
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STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465F - 04 ISSUE C NI - 400S MRF21030LSR3
MOTOROLA RF DEVICE DATA
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MRF21030LR3 MRF21030LSR3 7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF21030LR3 MRF21030LSR3 8
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MOTOROLA RF DEVICE DATA
MRF21030/D

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